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FDI045N10A-F102 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 100V 120A I2PAK-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 263W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
Rds On (Max) @ Id, Vgs 4.5m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 120A
Drain to Source Breakdown Voltage 100V
Length 10.29mm
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Part Status Active
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 263W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 26ns
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Gate to Source Voltage (Vgs) 20V
Height 9.65mm
Width 4.83mm
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "FDI04"   vaega

O vaega nei e aofia ai  'FDI04' 

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