FDG6322C Fa'amatalaga Fa'atekinolosi

FDG6322C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Weight 28mg
Operating Temperature -55°C~150°C TJ
Published 2017
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 55 ns
Threshold Voltage 850mV
Drain to Source Breakdown Voltage 25V
FET Feature Logic Level Gate
Height 1mm
Width 1.25mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 4Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 300mW
Current Rating 220mA
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 220mA 410mA
Rise Time 8ns
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 220mA
Gate to Source Voltage (Vgs) 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 850 mV
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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