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FDD7N60NZTM Fa'amatalaga Fa'atekinolosi

MOSFET N-Channel 600V 5.5A

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.25 Ω @ 2.75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 22A
Length 6.73mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Turn On Delay Time 17.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 40 ns
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 600V
Height 2.39mm
Width 6.22mm
Lead Free Lead Free
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O vaega nei e aofia ai  'FDD7N' 

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