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FDD5810-F085 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 60V 37A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 29 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 72W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.022Ohm
Avalanche Energy Rating (Eas) 45 mJ
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.4A Ta 37A Tc
Rise Time 75ns
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 7.4A
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
Lead Free Lead Free
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