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FDC642P-F085 Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 20V 4A 6SSOT

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Power Dissipation-Max 1.2W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain Current-Max (Abs) (ID) 4A
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 72 mJ
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Part Status Active
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4A Ta
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
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O vaega nei e aofia ai  'FDC64' 

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