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FDC6312P Fa'amatalaga Fa'atekinolosi

Trans MOSFET P-CH 20V 2.3A 6-Pin SuperSOT T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight 36mg
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Terminal Form GULL WING
Current Rating -2.3A
Qualification Status Not Qualified
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 115m Ω @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 467pF @ 10V
Rise Time 13ns
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 8V
Dual Supply Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -900 mV
Length 3mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 115MOhm
Subcategory Other Transistors
Max Power Dissipation 960mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Element Configuration Dual
Power Dissipation 960mW
Power - Max 700mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 18 ns
Threshold Voltage -900mV
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Width 1.7mm
RoHS Status ROHS3 Compliant
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