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FCPF190N60E Fa'amatalaga Fa'atekinolosi

FCPF190N60E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Packaging Tube
Series SuperFET® II
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Element Configuration Single
Turn On Delay Time 23 ns
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 212 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 650V
Length 10.36mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 39W Tc
Power Dissipation 39W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20.6A Tc
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 20.6A
Gate to Source Voltage (Vgs) 20V
Height 9.19mm
Width 4.9mm
RoHS Status ROHS3 Compliant
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