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FCPF13N60NT Fa'amatalaga Fa'atekinolosi

FCPF13N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 33.8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 258m Ω @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 39.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 9.8 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.258Ohm
Height 15.9mm
Width 4.7mm
REACH SVHC No SVHC
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series SuperMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 33.8W
Turn On Delay Time 14.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Tc
Rise Time 10.6ns
Vgs (Max) ±30V
Turn-Off Delay Time 45 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Length 10.16mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "FCPF1"   vaega

O vaega nei e aofia ai  'FCPF1' 

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