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2N5883G Fa'amatalaga Fa'atekinolosi

2N5883G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 200W
Terminal Form PIN/PEG
Current Rating 25A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 4MHz
Transistor Type PNP
Max Collector Current 25A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -60V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 4MHz
Base Part Number 2N5883
Number of Elements 1
Power Dissipation 200W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A 4V
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 60V
hFE Min 20
Length 31.75mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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