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2N5551RL1G Fa'amatalaga Fa'atekinolosi

2N5551RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number 2N5551
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 180V
hFE Min 80
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC 160V
Terminal Position BOTTOM
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 160V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 160V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
Lead Free Lead Free
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O isi e aofia ai   "2N555"   vaega

O vaega nei e aofia ai  '2N555' 

Vaega # Tufuga Vaega Avanoa
2N5550 AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single 88610
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2N5550BU Rochester Electronics, LLC Single BJT Transistors
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2N5550G ON Semiconductor Single BJT Transistors
2N5550G Rochester Electronics, LLC Single BJT Transistors

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