2N4401TAR Fa'amatalaga Fa'atekinolosi

2N4401TAR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 23 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight 240mg
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Current Rating 600mA
Base Part Number 2N4401
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV
Collector Base Voltage (VCBO) 60V
hFE Min 100
Length 5.2mm
Radiation Hardening No
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Position BOTTOM
Frequency 250MHz
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 600mA
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "2N440"   vaega

O vaega nei e aofia ai  '2N440' 

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