2N3771G Fa'amatalaga Fa'atekinolosi

2N3771G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150W
Terminal Form PIN/PEG
Current Rating 30A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 200 kHz
Transistor Type NPN
Max Collector Current 30A
Current - Collector Cutoff (Max) 10mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 2V
Emitter Base Voltage (VEBO) 5V
Height 8.51mm
Width 26.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 200kHz
Base Part Number 2N3771
Number of Elements 1
Power Dissipation 150W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 15A 4V
Vce Saturation (Max) @ Ib, Ic 4V @ 6A, 30A
Transition Frequency 0.2MHz
Collector Base Voltage (VCBO) 50V
hFE Min 15
Length 39.37mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "2N377"   vaega

O vaega nei e aofia ai  '2N377' 

Vaega # Tufuga Vaega Avanoa
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2N3772G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single 517
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