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VP2450N3-G Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 500V 0.1A TO92-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30 Ω @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 100mA
Drain to Source Breakdown Voltage -500V
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2007
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 740mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 100mA Tj
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Turn-Off Delay Time 45 ns
Gate to Source Voltage (Vgs) 20V
Feedback Cap-Max (Crss) 20 pF
Length 5.21mm
Radiation Hardening No
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O isi e aofia ai   "VP245"   vaega

O vaega nei e aofia ai  'VP245' 

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