TP0604N3-G Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 40V 430MA TO92-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 740mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 430mA Tj
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
Feedback Cap-Max (Crss) 60 pF
Length 5.21mm
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Terminal Position BOTTOM
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 20V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 430mA
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage -40V
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
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