DN2535N5-G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 350V 0.5A 3-Pin TO-220 Tube

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 15W Tc
Power Dissipation 15W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 0.5A
Pulsed Drain Current-Max (IDM) 0.5A
Height 9.02mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 0V
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Drive Voltage (Max Rds On,Min Rds On) 0V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 350V
FET Feature Depletion Mode
Length 10.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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