2N7000-G Fa'amatalaga Fa'atekinolosi

MOSFET,N-CHANNEL ENHANCEMENT MODE,60V,5 Ohm3 TO-92BAG

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Additional Feature HIGH INPUT IMPEDANCE
Voltage - Rated DC 60V
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 200mA Tj
Vgs (Max) ±30V
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 5Ohm
Feedback Cap-Max (Crss) 5 pF
Length 5.21mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 200mA
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 10 ns
Threshold Voltage 800mV
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 60V
Height 5.334mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
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