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SPU07N60S5 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 600V 7.3A TO-251

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 120 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 350μA
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Rise Time 40ns
Vgs (Max) ±20V
Turn-Off Delay Time 170 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 7.3A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 7.3A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 14.6A
Lead Free Lead Free
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