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IRLU3110ZPBF Fa'amatalaga Fa'atekinolosi

IRLU3110ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 250A
Nominal Vgs 2.5 V
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 110ns
Vgs (Max) ±16V
Turn-Off Delay Time 33 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Height 6.1mm
Width 2.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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