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IRLS3034-7PPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 40V 240A D2PAK-7

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G6
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4m Ω @ 200A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10990pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 200 ns
Continuous Drain Current (ID) 380A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 250 mJ
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 6
Resistance 1.4MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 71 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 240A Tc
Rise Time 590ns
Vgs (Max) ±20V
Turn-Off Delay Time 94 ns
Threshold Voltage 2.5V
Drain Current-Max (Abs) (ID) 240A
Pulsed Drain Current-Max (IDM) 1540A
Height 4.699mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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