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IRLR8729TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 58A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.9m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0089Ohm
Pulsed Drain Current-Max (IDM) 260A
Height 2.3876mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 55W Tc
Power Dissipation 55W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 58A Tc
Rise Time 47ns
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 74 mJ
Length 6.7056mm
Radiation Hardening No
Lead Free Lead Free
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