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IRLR3715ZPBF Fa'amatalaga Fa'atekinolosi

IRLR3715ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Resistance 11MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 7.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.55V @ 250μA
Current - Continuous Drain (Id) @ 25°C 49A Tc
Rise Time 13ns
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
Height 2.26mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 20V
Terminal Form GULL WING
Current Rating 49A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.3 ns
Continuous Drain Current (ID) 49A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 20V
Recovery Time 17 ns
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
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