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IRLMS2002TR Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 20V 6.5A 6-TSOP

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Cut Tape (CT)
Series HEXFET®
Part Status Obsolete
Number of Terminations 6
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drain Current-Max (Abs) (ID) 6.5A
Pulsed Drain Current-Max (IDM) 20A
RoHS Status Non-RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case SOT-23-6
Transistor Element Material SILICON
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 0.03Ohm
DS Breakdown Voltage-Min 20V
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