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IRLB8743PBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 78A TO220AB

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 150A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 78A
Pulsed Drain Current-Max (IDM) 620A
Recovery Time 44 ns
Height 9.02mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 8.7MOhm
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 23 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 78A Tc
Rise Time 92ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.8 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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