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IRLB3034PBF Fa'amatalaga Fa'atekinolosi

IRLB3034PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Part Status Active
Number of Terminations 3
Resistance 1.7MOhm
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 65 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 827ns
Vgs (Max) ±20V
Turn-Off Delay Time 97 ns
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 255 mJ
Height 19.8mm
Width 4.699mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Power Dissipation 375W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 195A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 355 ns
Continuous Drain Current (ID) 195A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 175°C
Length 10.5156mm
REACH SVHC No SVHC
Lead Free Lead Free
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