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IRL8113STRLPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 105A D2PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 250μA
Current - Continuous Drain (Id) @ 25°C 105A Tc
Rise Time 38ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Pulsed Drain Current-Max (IDM) 420A
Height 4.699mm
Width 9.65mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 105A
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 220 mJ
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
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