IRG7PH30K10DPBF Fa'amatalaga Fa'atekinolosi

IGBT 1200V 30A 180W TO247AC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 250
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 23 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Reverse Recovery Time 140ns
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.35V
Test Condition 600V, 9A, 22 Ω, 15V
Turn Off Time-Nom (toff) 390 ns
Gate Charge 45nC
Td (on/off) @ 25°C 14ns/110ns
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.7mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Max Power Dissipation 180W
[email protected] Reflow Temperature-Max (s) 30
Rise Time-Max 41ns
Power Dissipation 180W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 130 ns
Max Collector Current 30A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 9A
IGBT Type Trench
Current - Collector Pulsed (Icm) 27A
Switching Energy 530μJ (on), 380μJ (off)
Fall Time-Max (tf) 56ns
Length 15.87mm
Radiation Hardening No
RoHS Status RoHS Compliant
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