IRFU3711ZPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 20V 93A I-PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.45V @ 250μA
Current - Continuous Drain (Id) @ 25°C 93A Tc
Rise Time 13ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Threshold Voltage 2V
Drain-source On Resistance-Max 0.0057Ohm
Avalanche Energy Rating (Eas) 140 mJ
Nominal Vgs 2 V
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
Voltage - Rated DC 20V
Current Rating 93A
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5.2 ns
Continuous Drain Current (ID) 93A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Recovery Time 28 ns
Height 6.22mm
Width 2.3876mm
REACH SVHC No SVHC
Lead Free Lead Free
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