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IRFSL38N20DPBF Fa'amatalaga Fa'atekinolosi

INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 54m Ω @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 200V
Turn-Off Delay Time 29 ns
Threshold Voltage 5V
Drain-source On Resistance-Max 0.054Ohm
Avalanche Energy Rating (Eas) 460 mJ
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Min Operating Temperature -55°C
Max Power Dissipation 300W
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 3.8W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 43A Tc
Rise Time 95ns
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 200V
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
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