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IRFS59N10DTRLP Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 100V 59A D2PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 35.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 59A
Gate to Source Voltage (Vgs) 30V
Dual Supply Voltage 100V
Height 4.826mm
Width 10.54mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 25mOhm
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 59A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 59A Tc
Rise Time 90ns
Vgs (Max) ±30V
Turn-Off Delay Time 20 ns
Threshold Voltage 5.5V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 5.5 V
Length 10.668mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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