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IRFR3711PBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 20V 100A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Voltage - Rated DC 20V
Terminal Position SINGLE
Current Rating 110A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 120W Tc
Power Dissipation 120W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 220ns
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 440A
Nominal Vgs 3 V
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 460 mJ
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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