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IRFR3708TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 61A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 61A
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 87W
Turn On Delay Time 7.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 61A Tc
Rise Time 50ns
Vgs (Max) ±12V
Turn-Off Delay Time 17.6 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 244A
Max Junction Temperature (Tj) 175°C
Height 2.52mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 12.5mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 87W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.5m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Fall Time (Typ) 3.7 ns
Continuous Drain Current (ID) 61A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 2 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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