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IRFL4310TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 100V 1.6A SOT223

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 4
Resistance 200mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 1.6A
JESD-30 Code R-PDSO-G4
Number of Channels 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 7.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Rise Time 18ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
Threshold Voltage 2V
Drain Current-Max (Abs) (ID) 2.2A
Recovery Time 110 ns
Nominal Vgs 4 V
Height 1.8mm
Width 3.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 100V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Min Breakdown Voltage 100V
Length 6.6802mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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