IRFH5300TRPBF Fa'amatalaga Fa'atekinolosi

IRFH5300TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 3.6W Ta 250W Tc
Power Dissipation 3.6W
Turn On Delay Time 26 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 150μA
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Rise Time 30ns
Vgs (Max) ±20V
Turn-Off Delay Time 31 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 400A
Height 850μm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 5
Resistance 1.4MOhm
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 420 mJ
Length 6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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