IRFBA1405PPBF Fa'amatalaga Fa'atekinolosi

IRFBA1405PPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2002
Part Status Active
Number of Terminations 3
Resistance 5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 174A Tc
Rise Time 190ns
Vgs (Max) ±20V
Turn-Off Delay Time 130 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 680A
Height 15mm
Width 5mm
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-273AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 55V
Current Rating 174A
Power Dissipation-Max 330W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 101A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 174A
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 560 mJ
Length 10.9982mm
Radiation Hardening No
Lead Free Lead Free
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O isi e aofia ai   "IRFBA"   vaega

O vaega nei e aofia ai  'IRFBA' 

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