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IRFB3806PBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 60V 43A TO-220AB

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 71W
Turn On Delay Time 6.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 50μA
Current - Continuous Drain (Id) @ 25°C 43A Tc
Rise Time 40ns
Vgs (Max) ±20V
Turn-Off Delay Time 49 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Recovery Time 33 ns
Length 10.6426mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Resistance 15.8MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 43A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 60V
Height 9.017mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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