IRF9956PBF Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 30V 3.5A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 30V
Terminal Form GULL WING
Base Part Number IRF9956PBF
Element Configuration Dual
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Rise Time 8.8ns
Turn-Off Delay Time 13 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 44 mJ
FET Feature Logic Level Gate
Height 1.5mm
Width 4.05mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2003
Part Status Discontinued
Number of Terminations 8
Resistance 100mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Current Rating 3.5A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 1 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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