IRF8910GTRPBF Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 20V 10A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.55V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Fall Time (Typ) 4.1 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.4986mm
Width 3.9878mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 8
Max Power Dissipation 2W
Base Part Number IRF8910GPBF
Element Configuration Single
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Rise Time 10ns
Turn-Off Delay Time 9.7 ns
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.0134Ohm
Avalanche Energy Rating (Eas) 19 mJ
FET Feature Logic Level Gate
Length 4.9784mm
Radiation Hardening No
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