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IRF7506TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET 2P-CH 30V 1.7A MICRO8

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1997
Part Status Not For New Designs
Number of Terminations 8
Resistance 270mOhm
Max Power Dissipation 1.25W
Base Part Number IRF7506PBF
Element Configuration Dual
Power Dissipation 1.25W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 19 ns
Threshold Voltage -1V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Feature Logic Level Gate
Height 910μm
Width 3.048mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.7A
Rise Time 12ns
Fall Time (Typ) 9.3 ns
Continuous Drain Current (ID) -1.7A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 9.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs -1 V
Length 3.048mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "IRF75"   vaega

O vaega nei e aofia ai  'IRF75' 

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