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IRF7473TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 100V 6.9A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 100V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Row Spacing 6.3 mm
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 6.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 6.9A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 29 ns
Threshold Voltage 5.5V
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 55A
Nominal Vgs 5.5 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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