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IRF6662TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 100V 8.3A DIRECTFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 100V
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5.9 ns
Continuous Drain Current (ID) 6.6A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 39 mJ
Length 6.35mm
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MZ
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 31MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 8.3A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.9V @ 100μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 47A Tc
Rise Time 7.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 66A
Height 506μm
Width 5.05mm
RoHS Status ROHS3 Compliant
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O vaega nei e aofia ai  'IRF66' 

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