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IRF3315STRLPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 150V 21A D2PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 150V
Terminal Form GULL WING
Current Rating 21A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 94W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 82m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 21A
Drain to Source Breakdown Voltage 150V
Height 4.826mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 82mOhm
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 94W
Turn On Delay Time 9.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 32ns
Vgs (Max) ±20V
Turn-Off Delay Time 49 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 84A
Length 10.668mm
Radiation Hardening No
Lead Free Contains Lead
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