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IRF3205PBF Fa'amatalaga Fa'atekinolosi

IRF3205PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 110A
Number of Elements 1
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Dual Supply Voltage 55V
Recovery Time 104 ns
Nominal Vgs 4 V
Length 10.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 8mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Number of Channels 1
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 110A Tc
Rise Time 101ns
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 264 mJ
Max Junction Temperature (Tj) 175°C
Height 19.8mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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