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IRF1404ZSTRLPBF Fa'amatalaga Fa'atekinolosi

In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 110ns
Vgs (Max) ±20V
Turn-Off Delay Time 36 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 40V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 3.7MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 75A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 190A
Gate to Source Voltage (Vgs) 20V
Recovery Time 42 ns
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Contains Lead
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