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IPW65R150CFDFKSA1 Fa'amatalaga Fa'atekinolosi

MOSFET HIGH POWER_BEST IN CLASS

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 195.3W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5.6 ns
Continuous Drain Current (ID) 22.4A
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 72A
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Power Dissipation-Max 195.3W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 900μA
Current - Continuous Drain (Id) @ 25°C 22.4A Tc
Rise Time 7.6ns
Vgs (Max) ±20V
Turn-Off Delay Time 52.8 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 700V
RoHS Status ROHS3 Compliant
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