IPT012N08N5ATMA1 Fa'amatalaga Fa'atekinolosi

IPT012N08N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Manufacturer Package Identifier PG-HSOF-8
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 150A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 300A Tc
Rise Time 31ns
Vgs (Max) ±20V
Turn-Off Delay Time 82 ns
Threshold Voltage 3V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Height 2.4mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerSFN
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-F2
Number of Channels 1
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.8V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 17000pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 223nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 300A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 52A
Max Junction Temperature (Tj) 175°C
REACH SVHC No SVHC
Lead Free Contains Lead
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O vaega nei e aofia ai  'IPT01' 

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