IPP90R1K2C3XKSA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-220

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 68 mJ
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1
Power Dissipation-Max 83W Tc
Power Dissipation 83W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 400 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 900V
Radiation Hardening No
Lead Free Lead Free
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