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IPP65R110CFDAAKSA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 650V TO-220-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Rise Time 11ns
Vgs (Max) ±20V
Turn-Off Delay Time 68 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 99.6A
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101, CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 277.8W Tc
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 31.2A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.11Ohm
Avalanche Energy Rating (Eas) 845 mJ
Lead Free Contains Lead
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