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IPP084N06L3GXKSA1 Fa'amatalaga Fa'atekinolosi

MOSFET, N CH, 50A, 60V, PG-TO220-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 79W Tc
Power Dissipation 79W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0084Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 34μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
REACH SVHC No SVHC
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O isi e aofia ai   "IPP08"   vaega

O vaega nei e aofia ai  'IPP08' 

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