IPP032N06N3GXKSA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 60V 120A TO220-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Pin Count 3
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 118μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 188W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 120ns
Vgs (Max) ±20V
Turn-Off Delay Time 62 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
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