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IPP020N06NAKSA1 Fa'amatalaga Fa'atekinolosi

Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.8V @ 143μA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 29A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 420 mJ
Lead Free Contains Lead
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 3W Ta 214W Tc
Power Dissipation 214W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 29A Ta 120A Tc
Rise Time 45ns
Vgs (Max) ±20V
Turn-Off Delay Time 51 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
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